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| NTMS4705N Power MOSFET 30 V, 12 A, Single N-Channel, SO-8 Features * * * * * * * * Low RDS(on) Low Gate Charge Standard SO-8 Single Package Pb-Free Package is Available Notebooks, Graphics Cards Synchronous Rectification High Side Switch DC-DC Converters http://onsemi.com V(BR)DSS RDS(ON) TYP 8.0 mW @ 10 V 30 V 10.5 mW @ 4.5 V 12 A ID MAX (Note 1) Applications MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t v 10 s Power Dissipation (Note 1) Steady State t v 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, Tstg IS EAS ID TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value 30 20 10 7.2 12 1.52 2.3 7.4 5.3 0.85 36 -55 to 150 3.0 210 W A C A mJ SO-8 CASE 751 STYLE 12 A W Unit V V A G N-Channel D S MARKING DIAGRAM/ PIN ASSIGNMENT 1 1 8 Drain Drain Drain Drain 4705N AYWWG G Top View Source Source Source Gate Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 10 V, Peak IL = 7.5 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 4705N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) TL 260 C ORDERING INFORMATION Device Value 82 55 147 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Unit C/W NTMS4705NR2 NTMS4705NR2G SO-8 SO-8 (Pb-Free) 2500/Tape & Reel 2500/Tape & Reel Package Shipping Symbol RqJA RqJA RqJA THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size. (c) Semiconductor Components Industries, LLC, 2007 1 October, 2007 - Rev. 3 Publication Order Number: NTMS4705N/D NTMS4705N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 15 1.0 50 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.0 5.0 2.5 V mV/C VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A 8.0 10.5 19 10 14 mW Forward Transconductance gFS VDS = 15 V, ID = 10 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 3.0 A TJ = 25C TJ = 125C 0.73 0.51 38 VGS = 0 V, dIS/dt = 100 A/ms, IS = 3.0 A 17 21 30 nC ns 1.0 V td(on) tr td(off) tf VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W 7.8 4.7 27 17 ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 10 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 1078 460 127 11 1.1 2.1 5.8 1.76 3.5 W 18 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS4705N TYPICAL PERFORMANCE CURVES 30 ID, DRAIN CURRENT (AMPS) 25 20 15 2.6 V 10 5 0 0 2.4 V 5V 3.8 V 3.4 V 3.2 V TJ = 25C ID, DRAIN CURRENT (AMPS) 42 36 30 24 18 12 6 0 1 2 3 4 5 6 7 8 9 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 3 4 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 TJ = 125C TJ = 25C TJ = -55C VDS 10 V 3V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 2.5 7.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 TJ = 25C ID = 12 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.018 Figure 2. Transfer Characteristics TJ = 25C 0.014 VGS = 4.5 V 0.010 VGS = 10 V 0.006 0.002 4 8 16 12 20 ID, DRAIN CURRENT (AMPS) 24 Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 ID = 12 A VGS = 4.5 V IDSS, LEAKAGE (nA) 10000 1000000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 100 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS4705N TYPICAL PERFORMANCE CURVES VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2500 VDS = 0 V C, CAPACITANCE (pF) 2000 Ciss VGS = 0 V TJ = 25C 5 QT 4 QGS 3 QGD VGS 1500 Ciss 1000 Crss Coss Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 2 500 1 0 0 3 ID = 10 A TJ = 25C 12 6 9 QG, TOTAL GATE CHARGE (nC) 15 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 12 A VGS = 4.5 V t, TIME (ns) 100 tr tf 10 td(off) td(on) 18 15 12 9 6 3 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 1 0.2 0.6 0.8 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) Figure 10. Diode Forward Voltage vs. Current 220 200 180 160 140 120 100 80 60 40 20 0 25 100 50 75 125 TJ, STARTING JUNCTION TEMPERATURE (C) 150 ID = 10 A Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTMS4705N PACKAGE DIMENSIONS SOIC-8 CASE 751-07 ISSUE AJ -XA 8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 B 1 4 S 0.25 (0.010) M Y M -YG C -ZH D 0.25 (0.010) M SEATING PLANE K N X 45 _ 0.10 (0.004) M ZY S J X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTMS4705N/D |
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